Improving the crystal quality and optoelectronic property of GaSb with Al doping-Reference-Cited by-同舟云学术

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Improving the crystal quality and optoelectronic property of GaSb with Al doping

Published:2024-06 Issue: Volume:152 Page:115444
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Liu Jian,Liu Qiang,Li Xiang,Liu Ming,Xing Weirong,Nie Lifang,Liu Juncheng^ORCID

Publisher

Elsevier BV

Reference41 articles.

1. Direct band gap gallium antimony phosphide (GaSbxP1-x) alloys;Russell;Sci. Rep.,2016

2. Role of silicon on the conductivity GaSb surface: a first-principles study;Kang;Vacuum,2023

3. Metallization and electrical transport behaviors of GaSb under high-pressure;Zhang;Sci. Rep.,2017

4. Investigation of dopant centres dominating the conduction process in the bulk of un-doped GaSb;Shura;J. Theor. Appl. Phys.,2019

5. High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices;Hoang;Sci. Rep.,2016

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