An investigation of the crystalline nature for GaSb films on Si(111) at varied growth temperature and growth rate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab23f8/pdf
Reference32 articles.
1. Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate
2. Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications
3. Characterization of GaSb/AlGaSb Multi-Quantum-Well Structures Grown on Si(001) Substrates
4. Heteroepitaxial growth of GaSb on Si(001) substrates
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1. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique;East European Journal of Physics;2023-09-04
2. Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface;Nanomaterials;2023-01-04
3. Antimonidation of ultrathin epitaxial aluminum nanofilms for metamorphic growth of Sb-based structures on GaAs substrates;Japanese Journal of Applied Physics;2020-02-28
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