Molecular‐beam epitaxy of GaSb/AlSb optical device layers on Si(100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336734
Reference22 articles.
1. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
2. Molecular beam epitaxy of GaAs and AlGaAs on Si
3. Polar semiconductor quantum wells on nonpolar substrates: (Al,Ga)As/GaAs on (100)Ge
4. GaAs light‐emitting diodes fabricated on Ge‐coated Si substrates
5. Growth of GaAs on Si by MOVCD
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