Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer

Author:

Ince Fatih F.1ORCID,Frost Mega1ORCID,Shima Darryl1ORCID,Rotter Thomas J.1ORCID,Addamane Sadhvikas2ORCID,McCartney Martha R.3ORCID,Smith David J.3ORCID,Canedy Chadwick L.4ORCID,Tomasulo Stephanie4ORCID,Kim Chul Soo4ORCID,Bewley William W.4ORCID,Vurgaftman Igor4ORCID,Meyer Jerry R.4ORCID,Balakrishnan Ganesh15ORCID

Affiliation:

1. Center for High Technology Materials, The University of New Mexico 1 , Albuquerque, New Mexico 87108, USA

2. Center for Integrated Nanotechnologies, Sandia National Laboratories 2 , Albuquerque, New Mexico 87108, USA

3. Department of Physics, Arizona State University 3 , Tempe, Arizona 85287, USA

4. U.S. Naval Research Laboratory 4 , Washington, DC 20375, USA

5. Electrical and Computer Engineering, The University of New Mexico 5 , Albuquerque, New Mexico 87108, USA

Abstract

Interband cascade light-emitting diodes (ICLEDs) offer attractive advantages for infrared applications, which would greatly expand if high-quality growth on silicon substrates could be achieved. This work describes the formation of threading dislocations in ICLEDs grown monolithically on GaSb-on-Silicon wafers. The epitaxial growth is done in two stages: the GaSb-on-Silicon buffer is grown first, followed by the ICLED growth. The buffer growth involves the nucleation of a 10-nm-thick AlSb buffer layer on the silicon surface, followed by the GaSb growth. The AlSb nucleation layer promotes the formation of 90° and 60° interfacial misfit dislocations, resulting in a highly planar morphology for subsequent GaSb growth that is almost 100% relaxed. The resulting GaSb buffer for growth of the ICLED has a threading dislocation density of ∼107/cm2 after ∼3 μm of growth. The fabricated LEDs showed variations in device performance, with some devices demonstrating comparable light–current–voltage curves to those for devices grown on GaSb substrates, while other devices showed somewhat reduced relative performance. Cross-sectional transmission electron microscopy observations of the inferior diodes indicated that the multiplication of threading dislocations in the active region had most likely caused the increased leakage current and lower output power. Enhanced defect filter layers on the GaSb/Si substrates should provide more consistent diode performance and a viable future growth approach for antimonide-based ICLEDs and other infrared devices.

Funder

Army Research Office

Center for Integrated Nanotechnologies

Arizona State University

Publisher

AIP Publishing

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