Growth Nature of InSb Channel Layer on Heteroepitaxial Films of InGaSb Layer on GaSb/Si(111)-√3 × √3-Ga Surface Phase-Reference-Cited by-同舟云学术

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Growth Nature of InSb Channel Layer on Heteroepitaxial Films of InGaSb Layer on GaSb/Si(111)-√3 × √3-Ga Surface Phase

Published:2018 Issue:0 Volume:16 Page:20-26
ISSN:1348-0391
Container-title:e-Journal of Surface Science and Nanotechnology
language:en
Short-container-title:e-J. Surf. Sci. Nanotech.

Author:

Ali Mohammad Monzur-Ul-Akhir Ahmed¹,Mori Masayuki¹,Maezawa Koichi¹

Affiliation:

1. Nano & Functional Material Sciences, Graduate School of Science & Engineering, University of Toyama

Publisher

Surface Science Society Japan

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology

Link

https://www.jstage.jst.go.jp/article/ejssnt/16/0/16_20/_pdf

Reference30 articles.

1. [1] A. A. Md. Monzur-Ul-Akhir, M. Mori, and K. Maezawa, Phys. Status Solidi B 254, 1600528 (2016). ( https://doi.org/10.1002/pssb.201600528 )

2. [2] G. Balakrishnan, S. H. Huang, A. Khoshakhlagh, A. Jallipalli, P. Rotella, A. Amtout, S. Krishna, C. P. Haines, L. R. Dawson, and D. L. Huffaker, Electron. Lett. 42, 350 (2006). ( http://dx.doi.org/10.1049/el:20064286 )

3. [3] T. Ashley, L. Buckle, S. Datta, M. T. Emeny, D. G. Hayes, K. P. Hilton, R. Jefferies, T. Martin, T. J. Phillips, D. J. Wallis, P. J. Wilding, and R. Chau, Electron. Lett. 43, 777 (2007). ( http://dx.doi.org/10.1049/el:20071335 )

4. [4] H. Toyota, T. Sasaki, S. Nakamura, Y. Jinbo, and N. Uchitomi, Jpn. J. Appl. Phys. 47, 580 (2008). ( https://doi.org/10.1143/JJAP.47.580 )

5. [5] K. Akahane, N. Yamamoto, S. Gozu, and N. Ohtani, J. Cryst. Growth 264, 21 (2004). ( https://doi.org/10.1016/j.jcrysgro.2003.12.041 )

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1. Influence of Composition Ratio of In and Ga Atoms of InGaSb Bi-layer on Growth of InGaSb Thin Films on Si(111) Substrate;e-Journal of Surface Science and Nanotechnology;2022-12-08

2. An investigation of the crystalline nature for GaSb films on Si(111) at varied growth temperature and growth rate;Japanese Journal of Applied Physics;2019-07-17

3. Effect of flux ratio on GaSb films grown at a low temperature on Si(111);2019 Joint 8th International Conference on Informatics, Electronics & Vision (ICIEV) and 2019 3rd International Conference on Imaging, Vision & Pattern Recognition (icIVPR);2019-05

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