Influence of Composition Ratio of In and Ga Atoms of InGaSb Bi-layer on Growth of InGaSb Thin Films on Si(111) Substrate-Reference-Cited by-同舟云学术

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Influence of Composition Ratio of In and Ga Atoms of InGaSb Bi-layer on Growth of InGaSb Thin Films on Si(111) Substrate

Published:2022-12-08 Issue: Volume: Page:
ISSN:1348-0391
Container-title:e-Journal of Surface Science and Nanotechnology
language:en
Short-container-title:e-J. Surf. Sci. Nanotechnol.

Author:

Mori Masayuki¹,Inoue Jotaro¹,Maezawa Koichi¹

Affiliation:

1. Faculty of Engineering, Academic Assembly, University of Toyama

Publisher

Surface Science Society Japan

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology

Link

https://www.jstage.jst.go.jp/article/ejssnt/advpub/0/advpub_2023-012/_pdf

Reference33 articles.

1. [1] B. V. Rao, M. Atoji, D. M. Li, T. Okamoto, T. Tambo, and C. Tatsuyama, Jpn. J. Appl. Phys. 37, L1297 (1998).

2. [2] D. M. Li, M. Atoji, T. Okamoto, T. Tambo, and C. Tatsuyama, Surf. Sci. 417, 210 (1998).

3. [3] B. V. Rao, D. Gruznev, M. Mori, T. Tambo, and C. Tatsuyama, Surf. Sci. 493, 373 (2001).

4. [4] B. V. Rao, D. V. Gruznev, T. Tambo, and C. Tatsuyama, Jpn. J. Appl. Phys. 40, 4304 (2001).

5. [5] B. V. Rao, D. Gruznev, T. Tambo, and C. Tatsuyama, Appl. Surf. Sci. 175-176, 187 (2001).

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