Effects of Si Deposition on AlGaN Barrier Surfaces in GaN Heterostructure Field-Effect Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/1/i=7/a=071101/pdf
Reference7 articles.
1. Trapping effects and microwave power performance in AlGaN/GaN HEMTs
2. Growth and passivation of AlGaN/GaN heterostructures
3. Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier Layers
4. Improvement of AlGaN∕GaN high electron mobility transistor structures byin situdeposition of a Si3N4 surface layer
5. Effect of Surface Passivation on Two-Dimensional Electron Gas Carrier Density in AlGaN/GaN Structures
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1. High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer;Nanomaterials;2022-02-14
2. Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiN caps;Materials Science in Semiconductor Processing;2021-09
3. Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate;Electronics;2021-04-03
4. Effect of In-Situ Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs;IEEE Journal of the Electron Devices Society;2021
5. The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation;Microelectronics Reliability;2020-12
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