UV-Induced Variation of Interface Potential in AlOx/n-GaN Structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference16 articles.
1. III–Nitride UV Devices
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3. High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films;Applied Physics Letters;2016-08
4. A novel method for the determination of the full energetic distribution of interface state density in metal/insulator/GaN structures from capacitance - voltage and photocapacitance - light intensity measurements;AIP Conference Proceedings;2013
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