Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance–light intensity measurement-Reference-Cited by-同舟云学术

Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance–light intensity measurement

Published:2012-12-03 Issue:23 Volume:101 Page:231608
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Matys M.,Adamowicz B.,Hashizume T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4769815

Reference18 articles.

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2. Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

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4. Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

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