Investigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique
Author:
Affiliation:
1. National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
2. Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5098489
Reference52 articles.
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3. 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
4. Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers
5. Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
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4. Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation;Applied Physics Express;2023-12-29
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