High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films-Reference-Cited by-同舟云学术

High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films

Published:2016-08 Issue:5 Volume:109 Page:051106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Matys M.¹²,Adamowicz B.²,Zytkiewicz Z. R.³,Taube A.⁴,Kruszka R.⁴,Piotrowska A.⁴

Affiliation:

1. Research Center for Integrated Quantum Electronics, Hokkaido University, Kita-13 Nishi-8, Kita-ku, 060-8628 Sapporo, Japan

2. Surface Physics and Nanostructures Department, Institute of Physics-CND, Silesian University of Technology, Konarskiego 22B, 44-100 Gliwice, Poland

3. Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland

4. Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warsaw, Poland

Funder

InTechFun

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4960484

Reference25 articles.

1. UV Solid-State Light Emitters and Detectors

2. New concept ultraviolet photodetectors

3. Semiconductor ultraviolet detectors

4. Advances in Group-III-Nitride Photodetectors

5. UV-Induced Variation of Interface Potential in AlOx/n-GaN Structure

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