Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination-Reference-Cited by-同舟云学术

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Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination

Published:2020 Issue: Volume: Page:1-1
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Nagarajan Venkatesan,Chen Kun-Ming,Lin Hsin-Yi,Hu Hsin-Hui,Huang Guo-Wei,Chang Edward Yi

Funder

Ministry of Education Taiwan

Ministry of Science and Technology Taiwan

National Chung-Shan Institute of Science and Technology Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx7/7729/4359107/09093974.pdf?arnumber=9093974

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of tunnelling in double barrier nitride (AlGaN/GaN) heterojunction;Indian Journal of Physics;2024-05-20

2. Low Frequency Noise Analysis in AlGaN/GaN HEMTs;2023 1st International Conference on Circuits, Power and Intelligent Systems (CCPIS);2023-09-01

3. The effects of gas exposure on the graphene/AlGaN/GaN heterostructure under UV irradiation;Sensors and Actuators B: Chemical;2023-04

4. Al_0.18Ga_0.82N/GaN Two-Dimensional Electron Gas-Based Ultraviolet Photodetectors With Symmetrical Interdigitated Structure;IEEE Transactions on Electron Devices;2023-01

5. Trap-assisted degradation mechanisms in E-mode p-GaN power HEMT: A review;Microelectronics Reliability;2022-12

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