Author:
Drozdowska Katarzyna,Rumyantsev Sergey,Smulko Janusz,Kwiatkowski Andrzej,Sai Pavlo,Prystawko Paweł,Krajewska Aleksandra,Cywiński Grzegorz
Funder
Narodowym Centrum Nauki
European Commission
European Regional Development Fund
Fundacja na rzecz Nauki Polskiej
Narodowe Centrum Nauki
Subject
Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Reference43 articles.
1. R. Sokolovskij, J. Zhang, Y. Jiang, G. Chen, G.Q. Zhang, H. Yu, AlGaN/GaN HEMT micro-sensor technology for gas sensing applications, 2018 14th IEEE Int. Conf. Solid-State Integr. Circuit Technol. ICSICT 2018 - Proc. (2018) 2–5. https://doi.org/10.1109/ICSICT.2018.8564904.
2. Gallium nitride nanostructures for light-emitting diode applications;Kang;Nano Energy,2012
3. Flexible gallium nitride for high-performance, strainable radio-frequency devices;Glavin;Adv. Mater.,2017
4. A review of gallium nitride (GaN) based devices for high power and high frequency applications;Mudassir;J. Appl. Emerg. Sc.,2013
5. Gallium Nitride ( GaN) nanostructures and their gas sensing properties: a review;Khan;Sensors,2020
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