Dominant Failure Mechanism in Data Retention Characteristics of Resistance Change Memory Consisting of NiO at High Temperature
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/1/i=12/a=125001/pdf
Reference12 articles.
1. Electrode dependence of resistance switching in polycrystalline NiO films
2. Resistive memory switching in epitaxially grown NiO
3. Identification of a determining parameter for resistive switching of TiO2 thin films
4. Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
5. Resistance switching in the metal deficient-type oxides: NiO and CoO
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2. Switching mechanism in resistive random access memory by first-principles calculation using practical model based on experimental results;Japanese Journal of Applied Physics;2017-03-27
3. Influence of ultraviolet irradiation on data retention characteristics in resistive random access memory;Applied Physics Letters;2016-03-21
4. Switching of Cu/MoO x /TiN CBRAM at MoO x /TiN interface;physica status solidi (a);2015-12-17
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