Influence of ultraviolet irradiation on data retention characteristics in resistive random access memory-Reference-Cited by-同舟云学术

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Influence of ultraviolet irradiation on data retention characteristics in resistive random access memory

Published:2016-03-21 Issue:12 Volume:108 Page:123501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kimura K.¹,Ohmi K.¹²,Kishida S.¹³,Kinoshita K.¹³

Affiliation:

1. Graduate School of Engineering, Tottori University, 101 Minami4-chome, Koyama-cho, Tottori-shi, Tottori 680-8550, Japan

2. Tottori University Electronic Display Research Center, 101 Minami4-chome, Koyama-cho, Tottori-shi, Tottori 680-8551, Japan

3. Tottori Integrated Frontier Research Center, 101 Minami4-chome, Koyama-cho, Tottori-shi, Tottori 680-8552, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4944413

Reference45 articles.

1. The missing memristor found

2. Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

3. Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

4. Resistive switching in transition metal oxides

5. Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

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