Switching of Cu/MoO x /TiN CBRAM at MoO x /TiN interface-Reference-Cited by-同舟云学术

Switching of Cu/MoO x /TiN CBRAM at MoO x /TiN interface

Published:2015-12-17 Issue:2 Volume:213 Page:306-310
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Arita Masashi¹,Ohno Yuuki¹,Takahashi Yasuo¹

Affiliation:

1. Graduate School of Information Science and Technology; Hokkaido University; Kita-14, Nishi-9, Kita-Ku Sapporo 060-0814 Japan

Funder

Japan Society of the Promotion of Science (JSPS)

Mitsubishi Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Nanoionics-based resistive switching memories

2. Resistive Random Access Memory (ReRAM) Based on Metal Oxides

3. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

4. Nanoscale Memory Elements Based on Solid-State Electrolytes

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