Electrode dependence of resistance switching in polycrystalline NiO films-Reference-Cited by-同舟云学术

Electrode dependence of resistance switching in polycrystalline NiO films

Published:2005-12-26 Issue:26 Volume:87 Page:263507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Seo S.,Lee M. J.,Kim D. C.,Ahn S. E.,Park B.-H,Kim Y. S.,Yoo I. K.,Byun I. S.,Hwang I. R.,Kim S. H.,Kim J.-S.,Choi J. S.,Lee J. H.,Jeon S. H.,Hong S. H.,Park B. H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2150580

Reference12 articles.

1. Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface

2. Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface

3. Colossal electroresistance of aPr0.7Ca0.3MnO3thin film at room temperature

4. Field-induced resistive switching in metal-oxide interfaces

5. Reproducible resistance switching in polycrystalline NiO films

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