Nanoscale chemical state analysis of resistance random access memory device reacting with Ti
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3373594
Reference15 articles.
1. Reproducible resistance switching in polycrystalline NiO films
2. Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
3. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
4. Dominant Failure Mechanism in Data Retention Characteristics of Resistance Change Memory Consisting of NiO at High Temperature
5. Thermally formed conducting filaments in a single-crystalline NiO thin film
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1. Operando observation of analog resistance change in a buried metal/oxide interface by a laser-excited photoemission electron microscope;Japanese Journal of Applied Physics;2022-06-14
2. Graphene and Related Materials for Resistive Random Access Memories;Advanced Electronic Materials;2017-05-31
3. Intrinsic Mechanisms of Memristive Switching;Nano Letters;2011-05-11
4. Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy;Applied Physics Express;2011-04-14
5. Resistive Random Access Memory (ReRAM) Based on Metal Oxides;Proceedings of the IEEE;2010-12
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