Investigation of Field Concentration Effects in Arch Gate Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory

Author:

Lee Jung Hoon,Lee Gil Sung,Cho Seongjae,Yun Jang-Gn,Park Byung-Gook

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Aging Capacitor Supported Cache Management Scheme for Solid-State Drives;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2020-10

2. Exploiting Asymmetric Errors for LDPC Decoding Optimization on 3D NAND Flash Memory;IEEE Transactions on Computers;2020-04-01

3. A Progressive Performance Boosting Strategy for 3-D Charge-Trap NAND Flash;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2018-11

4. Boosting the Performance of 3D Charge Trap NAND Flash with Asymmetric Feature Process Size Characteristic;Proceedings of the 54th Annual Design Automation Conference 2017;2017-06-18

5. Impact of continuing scaling on the device performance of 3D cylindrical junction-less charge trapping memory;Journal of Semiconductors;2015-09

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