Impact of continuing scaling on the device performance of 3D cylindrical junction-less charge trapping memory-Reference-Cited by-同舟云学术

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Impact of continuing scaling on the device performance of 3D cylindrical junction-less charge trapping memory

Published:2015-09 Issue:9 Volume:36 Page:094008
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Li Xinkai,Huo Zongliang,Jin Lei,Jiang Dandan,Hong Peizhen,Xu Qiang,Tang Zhaoyun,Li Chunlong,Ye Tianchun

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/36/i=9/a=094008/pdf

Reference18 articles.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of grain boundary interface traps on electrical characteristics of top select gate transistor in 3D NAND flash memory;Solid-State Electronics;2019-03

2. The Optimization of Gate All Around-L-Shaped Bottom Select Transistor in 3D NAND Flash Memory;Journal of Nanoscience and Nanotechnology;2018-08-01

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