The Optimization of Gate All Around-L-Shaped Bottom Select Transistor in 3D NAND Flash Memory-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

The Optimization of Gate All Around-L-Shaped Bottom Select Transistor in 3D NAND Flash Memory

Published:2018-08-01 Issue:8 Volume:18 Page:5528-5533
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Zou Xingqi¹,Jin Lei¹,Jiang Dandan²,Zhang Yu¹,Chen Guoxing³,Xia Zhiliang¹,Huo Zongliang¹

Affiliation:

1. Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

2. College of Communication Engineering, Chengdu University of Information Technology, Chengdu, 610103, China

3. Yangtze Memory Technologies Co., Ltd. (YMTC), Wuhan 430205, China

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An effective process to remove etch damage prior to selective epitaxial growth in 3D NAND flash memory;Semiconductor Science and Technology;2019-07-30

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP