Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1343892
Reference38 articles.
1. Development of Sub-Quarter-µm MONOS (metal/oxide/nitride/oxide/semiconductor) Type Memory Transistor
2. Charge transport and storage of low programming voltage SONOS/MONOS memory devices
3. A novel MONOS nonvolatile memory device ensuring 10-year data retention after 10/sup 7/ erase/write cycles
4. Current Transport and Maximum Dielectric Strength of Silicon Nitride Films
5. Charge Transport and Storage in Metal‐Nitride‐Oxide‐Silicon (MNOS) Structures
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