Comparative Study on Program/Erase Efficiency and Retention Properties of 3-D SONOS Flash Memory Cell Array Transistors: Structural Approach from Double-Gate FET and FinFET to Gate-All-Around FET-Reference-Cited by-同舟云学术

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Comparative Study on Program/Erase Efficiency and Retention Properties of 3-D SONOS Flash Memory Cell Array Transistors: Structural Approach from Double-Gate FET and FinFET to Gate-All-Around FET

Published:2009-05-15 Issue:5(1) Volume:54 Page:1854-1861
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

Park So Ra,Kim Kwan Young,Choi Changmin,Song Kwan-Jae,Park Jun-Hyun,Jeon Kichan,Lee Sunyeong,Kim Tae Yoon,Lee Ji Eun,Lee Sangwon,Park Sungwook,Jang Jaeman,Kim Dong Myong,Kim Dae Hwan

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Study on a Tri-Gate SONOS Flash Memory with Gate Stack Engineering;Journal of the Korean Physical Society;2011-05-13

2. Investigation of Field Concentration Effects in Arch Gate Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory;Japanese Journal of Applied Physics;2010-11-22

3. Nanoscale Two-bit/cell NANDSilicon-oxide-nitride-oxide-silicon Flash Memories with an AdvancedSaddle Structure;Journal of the Korean Physical Society;2009-07-15

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