Nondestructive Visualization of Individual Dislocations in 4H-SiC Epilayers by Micro Photoluminescence Mapping
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference16 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. High-geometrical-resolution imaging of dislocations in SiC using monochromatic synchrotron topography
3. Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching
4. Nondestructive characterization of dislocations and micropipes in high-resistivity 6H–SiC wafers by deep-level photoluminescence mapping
5. Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface defects generated by extrinsic origins on 4H-SiC epitaxial-wafers observed by scanning electron microscopy;Microscopy;2016-12-08
2. Spectral response, carrier lifetime, and photocurrents of SiC photocathodes;Japanese Journal of Applied Physics;2015-10-28
3. Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers;Materials Science Forum;2014-02
4. Plan-View and Cross-Sectional Photoluminescence Imaging Analyses of Threading Dislocations in 4H-SiC Epilayers;Japanese Journal of Applied Physics;2013-04-01
5. Large area optical characterization of 3 and 4 inches 4H–SiC wafers;Thin Solid Films;2012-11
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