High-geometrical-resolution imaging of dislocations in SiC using monochromatic synchrotron topography
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2814032
Reference15 articles.
1. P. G. Neudeck, in The VLSI Handbook, The Electrical Engineering Handbook Series, edited by W.K. Chen (CRC/IEEE, Boca Raton, FL, 2000), p. 6–1.
2. Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties
3. Driving Force of Stacking-Fault Formation in SiCp−i−nDiodes
4. Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition
5. High-resolution x-ray topography of dislocations in 4H-SiC epilayers
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