Nondestructive characterization of dislocations and micropipes in high-resistivity 6H–SiC wafers by deep-level photoluminescence mapping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1862330
Reference16 articles.
1. Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances
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3. Correlation of Defect‐Impurity Interactions in GaP with Local Variations in Photoluminescence
4. Correlations of photoluminescence with defect densities in semi-insulating gallium arsenide
5. Mapping of EL2-Related Luminescence on Semi-Insulating GaAs Wafers at Room Temperature
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