Structure and reduction of large bumps formed on 4H-SiC epitaxial film originated from dislocations in substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. 4H-SiC epitaxial layer growth by trichlorosilane (TCS);La Via;J. Cryst. Growth,2008
2. Development of a 150mm 4H-SiC epitaxial reactor with high-speed wafer rotation;Fujibayashi;Appl. Phys. Express,2014
3. 150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD;Hara;Mater. Sci. Forum,2017
4. Filling 4H-SiC trench towards selective epitaxial growth by adding HCl to CVD process;Ji;Appl. Phys. Express,2015
5. Origin of Large Bumps Abnormally Grown on 4H-SiC Epitaxial Film by Adding HCl Gas with High Cl/Si Ratio in CVD Process;Daigo;Mater. Sci. Forum,2019
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1. Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers;Micromachines;2024-05-21
2. Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC;Micromachines;2024-04-29
3. Investigation of the recovery behavior of irradiation defects induced by a neutron in 4H-SiC combining Raman scattering and lattice parameters;Journal of Materials Research;2022-08-12
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