Very Low Threshold Current Operation of 1.3-µm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/42/i=6B/a=L643/pdf
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450 – 1500 nm) with ultra-narrow and strongly asymmetric waveguides;Quantum Electronics;2021-04-01
2. AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier;Quantum Electronics;2020-12-01
3. Superluminescent diodes in the spectral range of 1.5 – 1.6 μm based on strain-compensated AlGaInAs/InP quantum wells;Quantum Electronics;2020-09-01
4. AlGaInAs/InP semiconductor lasers with an increased electron barrier;Quantum Electronics;2019-06-01
5. Optimization of active region for 1.3-µm GalnAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes;Journal of Electronic Materials;2006-02
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