Author:
Sabitov D.R.,Ryaboshtan Yu.L.,Svetogorov V.N.,Padalitsa A.A.,Ladugin M.A.,Marmalyuk A.A.,Vasil’ev M.G.,Vasil’ev A.M.,Kostin Yu.O.,Shelyakin A.A.
Abstract
Abstract
Superluminescent diodes based on AlGaInAs/InP separate-confinement double heterostructures with strain-compensated quantum wells are investigated. The influence of elastic strains in the active region on the output characteristics of the devices is analysed. It is shown that such a design of a superluminescent diode allows an optical power of more than 5 mW, a radiation spectrum width of more than 60 nm, a degree of output radiation polarisation up to 30 dB to be obtained at the output of a single-mode fibre, and has a great potential for further improvement.
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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