Author:
Volkov N.A.,Svetogorov V.N.,Ryaboshtan Yu.L.,Andreev A.Yu.,Yarotskaya I.V.,Ladugin M.A.,Padalitsa A.A.,Marmalyuk A.A.,Slipchenko S.O.,Lyutetskii A.V.,Veselov D.A.,Pikhtin N.A.
Abstract
Abstract
Semiconductor lasers based on AlGaInAs/InP heterostructures with ultra-narrow and asymmetric waveguides are comparatively studied. It is shown that the use of these waveguides with a simultaneous increase in the quantum well depth makes it possible to increase output powers. Such lasers based on both strongly asymmetric and ultra-narrow waveguides with a stripe contact width of 100 μm demonstrate an output power of 5 W (at pump currents of 11.5 and 14 A, respectively) in a continuous-wave regime at room temperature and a wavelength of 1450 – 1500 nm.
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
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