Implementation of energy barrier layers for 1550 nm high-power laser diodes-Reference-Cited by-同舟云学术

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Implementation of energy barrier layers for 1550 nm high-power laser diodes

Published:2023-11 Issue: Volume:263 Page:120164
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Veselov D.A.,Pikhtin N.A.,Slipchenko S.O.,Kirichenko I.K.,Podoskin A.A.^ORCID,Shuvalova N.V.,Rudova N.A.,Vavilova L.S.,Rastegaeva M.G.,Bagaev T.A.,Svetogorov V.N.,Padalitsa A.A.,Ryaboshtan Yu.L.,Ladugin M.A.,Marmalyuk A.A.

Funder

Russian Science Foundation

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference21 articles.

1. Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm;Marmalyuk;Quant. Electron.,2018

2. Semiconductor AlGaInAs/InP lasers (λ= 1450–1500 nm) with a strongly asymmetric waveguide;Volkov;Quant. Electron.,2021

3. Comparison of AlGaInAs/InP semiconductor lasers (λ= 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides;Volkov;Quant. Electron.,2021

4. 25 W pulses from 1.5 μm double‐asymmetric waveguide, 100 μ m stripe laser diode with bulk active layer;Hallman;Electron. Lett.,2021

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