Optimization of active region for 1.3-µm GalnAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes-Reference-Cited by-同舟云学术

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Optimization of active region for 1.3-µm GalnAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes

Published:2006-02 Issue:2 Volume:35 Page:243-249
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Lei Po-Hsun,Yang Chyi-Dar,Wu Ming-Yuan,Hu Chih-Wei,Wu Meng-Chyi,Huang Yin-Hsun,Ho Wen-Jeng

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02692442.pdf

Reference13 articles.

1. C.E. Zah et al.,IEEE J. Quantum Electron. 30, 511 (1994).

2. J.W. Pan and J.I. Chyi,IEEE J. Quantum Electron. 32, 2133 (1996).

3. S.R. Forrest, P.H. Schmidt, R.B. Wilson, and M.L. Kaplan,Appl. Phys. Lett. 45, 1199 (1984).

4. I. Queisser, V. Härle, A. Dőrnen, and F. Scholz,Appl. Phys. Lett. 64, 2991 (1994).

5. H. Temkin, D. Coblentz, R.A. Logan, J.M. Vandenberg, R.D. Yadvish, and A.M. Sergent,Appl. Phys. Lett. 63, 2321 (1993).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lateral power-monitoring photodiode monolithically integrated into 1.3μm GaInAsP laser;Solid-State Electronics;2012-01

2. High-Power Single-Mode 1.3-$\mu$m InGaAsP–InGaAsP Multiple-Quantum-Well Laser Diodes With Wide Apertures;IEEE Photonics Technology Letters;2009-10

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