Strained quaternary quantum well lasers for high temperature operation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110513
Reference12 articles.
1. High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μm
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3. Low threshold 1.5 μm tensile-strained single quantum well lasers
4. Strained multiple quantum well lasers emitting at 1.3 μm grown by low‐pressure metalorganic vapor phase epitaxy
5. High temperature operation of lattice matched and strained InGaAs-InP quantum well lasers
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