Strained InGaAs/InP quantum well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102562
Reference18 articles.
1. Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition
2. InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition
3. Band-structure engineering for low-threshold high-efficiency semiconductor lasers
4. Extremely wide modulation bandwidth in a low threshold current strained quantum well laser
5. Enhancement of modulation bandwidth in InGaAs strained‐layer single quantum well lasers
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1. Effects of Strain in Low-Dimensional Semiconductor Structures;Nanoscience and Nanotechnology Letters;2017-07-01
2. Spontaneous Emission and Fundamental Limitations on the Signal-to-Noise Ratio in Deep-Subwavelength Plasmonic Waveguide Structures with Gain;Physical Review Applied;2016-12-29
3. On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm;Semiconductors;2016-10
4. Temperature dependence of photoluminescence from Γ–Γ and Γ–Xminibands in lattice matched InGaAs/InP superlattices;Journal of Physics D: Applied Physics;2015-10-07
5. Arsenic Irradiation Induced Atomic Interdiffusion of InxGa1-xAs/InP Quantum Well Structures;Atom Indonesia;2013-02-13
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