Enhancement of modulation bandwidth in InGaAs strained‐layer single quantum well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101688
Reference10 articles.
1. Reduction of lasing threshold current density by the lowering of valence band effective mass
2. Band-structure engineering for low-threshold high-efficiency semiconductor lasers
3. Extremely wide modulation bandwidth in a low threshold current strained quantum well laser
4. Recombination lifetime of carriers in GaAs‐GaAlAs quantum wells near room temperature
5. Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities
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