Author:
Marmalyuk A.A.,Ivanov A.V.,Kurnosov V.D.,Kurnosov K.V.,Ladugin M.A.,Lobintsov A.V.,Padalitsa A.A.,Romantsevich V.I.,Ryaboshtan Yu.L.,Sapozhnikov S.M.,Svetogorov V.N.,Simakov V.A.
Abstract
Abstract
This paper presents an experimental study of AlGaInAs/InP semiconductor lasers with different barrier layers. The use of strained layers with an increased band gap as blocking barriers limiting carrier leakage is shown to increase the output power of the lasers at a given pump current.
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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