Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode-Reference-Cited by-同舟云学术

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Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode

Published:1999-09-15 Issue:Part 2, No. 9A/B Volume:38 Page:L975-L977
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Deguchi Takahiro,Torii Kosuke,Shimada Kazuhiro,Sota Takayuki,Matsuo Ryuji,Sugiyama Mutsumi,Setoguchi Akiko,Chichibu Shigefusa,Nakamura Shuji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wurtzite [11-20]-oriented AlFeN films prepared by RF sputtering;AIP Advances;2018-11

2. Impact of thermal treatment on the growth of semipolar AlN on m-plane sapphire;AIP Advances;2018-10

3. GaN-based Optoelectronic Devices;Encyclopedia of Materials: Science and Technology;2001

4. Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells;Japanese Journal of Applied Physics;2000-04-30

5. Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes;Applied Physics Letters;2000-03-27

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