GaN-based Optoelectronic Devices-Reference-Cited by-同舟云学术

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GaN-based Optoelectronic Devices

Published:2001 Issue: Volume: Page:3445-3455
ISSN:
Container-title:Encyclopedia of Materials: Science and Technology
language:
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Author:

Bour D.P.

Publisher

Elsevier

Reference17 articles.

1. Widegap column-III nitride semiconductors for UV/blue light-emitting devices;Akasaki;J. Electrochem. Soc,1994

2. Optical properties of InGaN quantum wells;Chichibu;Mater. Sci. Eng,1999

3. Effective band gap inhomogeneity and pizoelectric field in InGaN/GaN multiquantum well structures;Chichibu;Appl. Phys. Lett,1998

4. Optical properties of an InGaN active layer in ultraviolet light emitting diode;Deguchi;Jpn. J. Appl. Phys,1999

5. Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy;Hiramatsu;Mater. Sci. Eng,1999

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