Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes-Reference-Cited by-同舟云学术

Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes

Published:2000-03-27 Issue:13 Volume:76 Page:1671-1673
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chichibu S. F.,Wada K.,Müllhäuser J.,Brandt O.,Ploog K. H.,Mizutani T.,Setoguchi A.,Nakai R.,Sugiyama M.,Nakanishi H.,Korii K.,Deguchi T.,Sota T.,Nakamura S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.126131

Reference21 articles.

1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

2. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

3. Theory of spontaneous-emission lifetime of Wannier excitons in mesoscopic semiconductor quantum disks

4. Spatially resolved cathodoluminescence spectra of InGaN quantum wells

5. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

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