Temperature Dependent “S-Shaped” Photoluminescence Behavior of InGaN Nanolayers: Optoelectronic Implications in Harsh Environment
Author:
Affiliation:
1. Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
2. Central Research Laboratory, Bharat Electronics, Bangalore 560013, India
Funder
Indian National Science Academy
Council of Scientific and Industrial Research
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c01930
Reference38 articles.
1. Temperature dependence of the dielectric function of germanium
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3. Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells
4. Semi-empirical descriptions of temperature dependences of band gaps in semiconductors
5. Temperature-dependent S-shaped photoluminescence in ZnCdO alloy
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