A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk and quantum well structures-Reference-Cited by-同舟云学术

A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk and quantum well structures

Published:2014-01-10 Issue:6 Volume:47 Page:065103
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Dixit V K,Porwal S,Singh S D,Sharma T K,Ghosh Sandip,Oak S M

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/47/i=6/a=065103/pdf

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5. Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells

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