Probing the Band Splitting near the Γ Point in the van der Waals Magnetic Semiconductor CrSBr-Reference-Cited by-同舟云学术

Probing the Band Splitting near the Γ Point in the van der Waals Magnetic Semiconductor CrSBr

Published:2024-05-30 Issue:23 Volume:15 Page:6010-6016
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Lin Kaiman¹²,Li Yi²³^ORCID,Ghorbani-Asl Mahdi²^ORCID,Sofer Zdenek⁴^ORCID,Winnerl Stephan²,Erbe Artur²³^ORCID,Krasheninnikov Arkady V.²^ORCID,Helm Manfred²³,Zhou Shengqiang²^ORCID,Dan Yaping¹^ORCID,Prucnal Slawomir²^ORCID

Affiliation:

1. University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, 20024 Shanghai, P. R. China

2. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany

3. TU Dresden, 01062 Dresden, Germany

4. Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 16628 Prague 6, Czech Republic

Funder

Shanghai Jiao Tong University

Ministerstvo ?kolstv?, Ml?de?e a Telov?chovy

Shanghai Municipal Education Commission

China Scholarship Council

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.4c00968

Reference34 articles.

1. Magnetic properties of CrSBr

2. Screening and Design of Novel 2D Ferromagnetic Materials with High Curie Temperature above Room Temperature

3. A family of high-temperature ferromagnetic monolayers with locked spin-dichroism-mobility anisotropy: MnNX and CrCX (X = Cl, Br, I; C = S, Se, Te)

4. Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

5. Chromium sulfide halide monolayers: intrinsic ferromagnetic semiconductors with large spin polarization and high carrier mobility