Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr-Reference-Cited by-同舟云学术

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

Published:2020-08-09 Issue:37 Volume:32 Page:2003240
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Telford Evan J.¹,Dismukes Avalon H.²^ORCID,Lee Kihong²,Cheng Minghao¹,Wieteska Andrew¹,Bartholomew Amymarie K.²,Chen Yu‐Sheng³,Xu Xiaodong⁴,Pasupathy Abhay N.¹,Zhu Xiaoyang²,Dean Cory R.¹,Roy Xavier²^ORCID

Affiliation:

1. Department of Physics Columbia University New York NY 10027 USA

2. Department of Chemistry Columbia University New York NY 10027 USA

3. NSF's ChemMatCARS University of Chicago Chicago IL 60439 USA

4. Department of Physics University of Washington Seattle WA 98195 USA

Funder

U.S. Department of Energy

Office of Science

Basic Energy Sciences

National Science Foundation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202003240

Reference45 articles.

1. Screening and Design of Novel 2D Ferromagnetic Materials with High Curie Temperature above Room Temperature

2. Opportunities at the Frontiers of Spintronics

3. Addressing an antiferromagnetic memory

4. Review on spintronics: Principles and device applications

5. Anisotropic magnetoresistance in ferromagnetic 3d alloys

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