Structural and optical analyses for InGaN-based red micro-LED-Reference-Cited by-同舟云学术

Structural and optical analyses for InGaN-based red micro-LED

Published:2023-05-25 Issue:1 Volume:18 Page:
ISSN:2731-9229
Container-title:Discover Nano
language:en
Short-container-title:Discover Nano

Author:

Hsiao Fu-He,Miao Wen-Chien,Hong Yu-Heng,Chiang Hsin,Ho I-Hung,Liang Kai-Bo,Iida Daisuke,Lin Chun-Liang,Ahn Hyeyoung,Ohkawa Kazuhiro,Chang Chiao-Yun,Kuo Hao-Chung

Abstract

AbstractThis study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.

Funder

the Ministry of Science and Technology in Taiwan

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1186/s11671-023-03853-1.pdf

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