Visualizing carrier transitions between localization states in a InGaN yellow–green light-emitting-diode structure-Reference-Cited by-同舟云学术

Visualizing carrier transitions between localization states in a InGaN yellow–green light-emitting-diode structure

Published:2019-09-07 Issue:9 Volume:126 Page:095705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Li Yangfeng¹²^ORCID,Deng Zhen¹²,Ma Ziguang¹²,Wang Lu¹²,Jia Haiqiang¹²,Wang Wenxin¹²,Jiang Yang¹²,Chen Hong¹²

Affiliation:

1. Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China

2. University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China

Funder

the Innovative clean-energy research and application program of Beijing Municipal of Science and Technology Commission

the National Key Technology R&D Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5100989

Reference29 articles.