Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga<sub>2</sub>O<sub>3</sub>/n-GaN MIS heterojunction light-emitting diodes-Reference-Cited by-同舟云学术

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Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga₂O₃/n-GaN MIS heterojunction light-emitting diodes

Published:2023 Issue:45 Volume:11 Page:16026-16036
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhang Xian¹^ORCID,Yue Zhiang¹,Xiang Guojiao¹,Zhang Jinming¹,Zhao Enqin¹,Song Chengle¹,Ding Bingxin¹,He Hangyu¹,Wang Lukai¹,Jin Wenwen¹,Shu Jingwen¹,Wang Hui¹^ORCID,Zhao Yang¹^ORCID

Affiliation:

1. Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications, School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China

Abstract

The low lattice mismatch between β-Ga2O3 and GaN alleviates interface defects and improves device performance, and the EL spectra of Ga2O3/GaN heterojunction devices emit ultra-violet and yellow-green light at forward and reverse bias.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC03457G

Reference59 articles.

1. Color-Tunable Light-Emitting Diodes Based on Rare Earth Doped Gallium Oxide Films

2. Metal–Insulator–Semiconductor Diode Consisting of Two-Dimensional Nanomaterials

3. Optoelectronic properties of Co/pentacene/Si MIS heterojunction photodiode

4. A simple synthesis of Ga2O3 and GaN nanocrystals

5. On reverse gate leakage current of GaN high electron mobility transistors on silicon substrate

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