Wurtzite [11-20]-oriented AlFeN films prepared by RF sputtering
Author:
Affiliation:
1. Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5053147
Reference29 articles.
1. Band structure and fundamental optical transitions in wurtzite AlN
2. Growth and applications of Group III-nitrides
3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
4. Strain-induced polarization in wurtzite III-nitride semipolar layers
5. Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Formation of various-axis-oriented wurtzite nuclei and enlargement of the a-axis-oriented region in AlFeN films deposited on Si(100) substrates;Materials Advances;2021
2. Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect;Scientific Reports;2020-02-04
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