Impact of thermal treatment on the growth of semipolar AlN on m-plane sapphire-Reference-Cited by-同舟云学术

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Impact of thermal treatment on the growth of semipolar AlN on m-plane sapphire

Published:2018-10 Issue:10 Volume:8 Page:105312
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Jo Masafumi¹,Morishita Naoki²,Okada Narihito²^ORCID,Itokazu Yuri¹³,Kamata Norihiko³^ORCID,Tadatomo Kazuyuki²,Hirayama Hideki¹

Affiliation:

1. RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

2. Graduate School of Science and Technology for Innovation, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan

3. Department of Functional Materials Science, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/1.5052294

Reference28 articles.

1. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

2. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

3. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

4. 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power

5. Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxy of (11–22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy;Materials;2024-01-09

2. 2-inch semi-polar (112̄2) AlN templates prepared by high-temperature hydride vapor phase epitaxy;CrystEngComm;2024

3. High-Temperature Annealing Assisted High-Quality Semipolar (112̅2) AlN Film for Vacuum Ultraviolet Detectors;Crystal Growth & Design;2023-11-17

4. Temperature-Dependent Optical Behaviors and Demonstration of Carrier Localization in Polar and Semipolar AlGaN Multiple Quantum Wells;Crystals;2023-07-08

5. Formation mechanism of (10−13) AlN twins on m-plane sapphire substrates at high temperature by hydride vapor phase epitaxy;CrystEngComm;2023

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