Experimental Determination of Electron Affinities for InN and GaN Polar Surfaces-Reference-Cited by-同舟云学术

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Experimental Determination of Electron Affinities for InN and GaN Polar Surfaces

Published:2012-03-01 Issue:3 Volume:5 Page:031003
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Lin Shih-Chieh,Kuo Cheng-Tai,Liu Xiaoge,Liang Li-Yen,Cheng Ching-Hung,Lin Chung-Huang,Tang Shu-Jung,Chang Lo-Yueh,Chen Chia-Hao,Gwo Shangjr

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=3/a=031003/pdf

Reference21 articles.

1. Temperature dependence of the fundamental band gap of InN

2. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

3. When group-III nitrides go infrared: New properties and perspectives

4. Origin of electron accumulation at wurtzite InN surfaces

5. Universal alignment of hydrogen levels in semiconductors, insulators and solutions

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