Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=1/a=011001/pdf
Reference17 articles.
1. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
2. Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition
3. Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films
4. Stress relaxation in mismatched layers due to threading dislocation inclination
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1. AlN/GaN HEMTs with fmax Exceeding 300 GHz by Using Ge-Doped n++GaN Ohmic Contacts;ACS Applied Electronic Materials;2023-09-11
2. Inversion of the Internal Electric Field due to Inhomogeneous Incorporation of Ge Dopants in GaN/AlN Heterostructures Studied by Off-Axis Electron Holography;ACS Applied Materials & Interfaces;2023-02-15
3. Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation;Applied Physics Letters;2023-02-06
4. Impact of Ge doping on MOVPE grown InGaN layers;Journal of Crystal Growth;2023-02
5. Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy;physica status solidi (a);2022-12-09
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